Publications

 

166. AI-Accelerated Electronic Materials Discovery and Development
Christopher C Price, Ichiro Takeuchi, James Rondinelli, Wei Chen, Christopher L Hinkle
IEEE Computer Magazine, 2025, Vol. 58, pp. 98-104

165. Predicting and Accelerating Nanomaterial Synthesis Using Machine Learning Featurization
Christopher C Price, Yansong Li, Guanyu Zhou, Rehan Younas, Spencer S Zeng, Tim H Scanlon, Jason M Munro, Christopher L Hinkle
Nano Letters, 2024, Vol. 24, pp. 14862--14867

164. Multi-Objective Optimization for Rapid Identification of Novel Compound Metals for Interconnect Applications
Akash Ramdas, Guanyu Zhou, Yansong Li, Ping-Lien Lu, Evan R Antoniuk, Evan J Reed, Christopher L Hinkle, Felipe H da Jornada
Small, 2024, pp. e2308784

163. Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn-, V-, and Fe-Doped WSe2
Sabyasachi Tiwari, Maarten Van de Put, Sorie
ACS Applied Materials & Interfaces, 2024, Vol. 16, pp. 4991--4998

162. Bulk Traps in Layered 2D Gate Dielectrics
Jaemin Shin, Tyafur Pathan, Guanyu Zhou, Christopher L Hinkle
ECS Transactions, 2024, Vol. 113, pp. 25

162. REALIZATION OF A PERFECT LIGHT ABSORBER IN TWO-DIMENSIONAL BILAYER BY REDUCING INTERLAYER INTERACTION
Seungjun Lee, Dongjea Seo, Sang Hyun Park, Tony Low, Steven J Koester, Rehan Younas, Christopher Hinkle
US Patent App. 18/733,569, 2024

160. A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities
Rehan Younas, Guanyu Zhou, Christopher L Hinkle
Applied Physics Letters, 2023, Vol. 122, pp. 160504

159. Recent advances in 2D material theory, synthesis, properties, and applications
Yu-Chuan Lin, Riccardo Torsi, Rehan Younas, Christopher L Hinkle, Albert F Rigosi, Heather M Hill, Kunyan Zhang, Shengxi Huang, Christopher E Shuck, Chen Chen, others
ACS Nano, 2023, Vol. 17, pp. 9694--9747

158. Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting
Seungjun Lee, Dongjea Seo, Sang Hyun Park, Nezhueytl Izquierdo, Eng Hock Lee, Rehan Younas, Guanyu Zhou, Milan Palei, Anthony J Hoffman, Min Seok Jang, others
Nature Communications, 2023, Vol. 14, pp. 3889

157. Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions
Ji-Hoon Kang, Heechang Shin, Ki Seok Kim, Min-Kyu Song, Doyoon Lee, Yuan Meng, Chanyeol Choi, Jun Min Suh, Beom Jin Kim, Hyunseok Kim, others
Nature Materials, 2023, Vol. 22, pp. 1470--1477

156. Three-dimensional-topological-insulator tunnel diodes
Stephen P Fluckey, Sabyasachi Tiwari, Christopher L Hinkle, William G Vandenberghe
Physical Review Applied, 2022, Vol. 18, pp. 064037

155. Superior quality low-temperature growth of three-dimensional semiconductors using intermediate two-dimensional layers
Guanyu Zhou, Rehan Younas, Tian Sun, Galen Harden, Yansong Li, Anthony J Hoffman, Christopher L Hinkle
ACS Nano, 2022, Vol. 16, pp. 19385--19392

154. Controlling the Pd Metal Contact Polarity to Trigonal Tellurium by Atomic Hydrogen-Removal of the Native Tellurium Oxide
Christopher M Smyth, Guanyu Zhou, Adam T Barton, Robert M Wallace, Christopher L Hinkle
Advanced Materials Interfaces, 2021, Vol. 8, pp. 2002050

153. Materials and Device Strategies for Nanoelectronic 3D Heterogeneous Integration
Guanyu Zhou, Tian Sun, Rehan Younas, Christopher L Hinkle
Proceedings of SISPAD, 2021, pp. 163-166

152. Materials for interconnects
Daniel Gall, Judy J Cha, Zhihong Chen, Hyeuk-Jin Han, Christopher Hinkle, Joshua A Robinson, Ravishankar Sundararaman, Riccardo Torsi
MRS Bulletin, 2021, pp. 1--8

151. New Strategies in Nanoelectronic 3D Heterogeneous Integration
Christopher L Hinkle
NSF Workshop on the Future of Semiconductors (FuSe), 2021

150. Origins of Fermi level pinning between tungsten dichalcogenides (WS2, WTe2) and bulk metal contacts: Interface chemistry and band alignment
Christopher M Smyth, Rafik Addou, Christopher L Hinkle, Robert M Wallace
The Journal of Physical Chemistry C, 2020, Vol. 124, pp. 14550--14563

149. Ferromagnetism and Exchange Coupling with Fe-Doped WSe2
Christopher Hinkle
ECS Transactions, 2020, pp. 857--857

148. Bandgap engineering of two-dimensional semiconductor materials
A Chaves, Javad G Azadani, Hussain Alsalman, DR Da Costa, R Frisenda, AJ Chaves, Seung Hyun Song, Young Duck Kim, Daowei He, Jiadong Zhou, others
npj 2D Materials and Applications, 2020, Vol. 4, pp. 29

147. Vertical Integration through Direct Growth of Van Der Waals Materials
Christopher Hinkle
, 2020, pp. 1033--1033

146. Transition Metal Doping of MoS2: A Correlated Experimental and Theoretical Study
Lee Walsh, Lida Ansari, Scott Monaghan, Kuanysh Zhussupbekov, Ainur Zhussupbekova, {\'O
, 2020, pp. 847--847

145. Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study
Aaron Kramer, Maarten L Van de Put, Christopher L Hinkle, William G Vandenberghe
npj 2D Materials and Applications, 2020, Vol. 4, pp. 10

144. Two-dimensional electric-double-layer Esaki diode
Paolo Paletti, Ruoyu Yue, Christopher Hinkle, Susan K Fullerton-Shirey, Alan Seabaugh
npj 2D Materials and Applications, 2019, Vol. 3, pp. 19

143. Understanding the impact of annealing on interface and border traps in the Cr/HfO2/Al2O3/MoS2 system
Peng Zhao, Andrea Padovani, Pavel Bolshakov, Ava Khosravi, Luca Larcher, Paul K Hurley, Christopher L Hinkle, Robert M Wallace, Chadwin D Young
ACS Applied Electronic Materials, 2019, Vol. 1, pp. 1372--1377

142. Trigonal Tellurium Nanostructure Formation Energy and Band gap
Aaron Kramer, Maarten L Van de Put, Christopher L Hinkle, William G Vandenberghe
, 2019, pp. 1--4

141. Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes
Christopher M Smyth, Lee A Walsh, Pavel Bolshakov, Massimo Catalano, Michael Schmidt, Brendan Sheehan, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon J Kim, others
2D Materials, 2019, Vol. 6, pp. 045020

140. A roadmap for electronic grade 2D materials
Kehao Zhang, Kai Xiao, David Geohegan, Robert Wallace, Long-Qing Chen, Mauricio Terrones, Aida Ebrahimi, Saptarshi Das, Joan Redwing, Christopher Hinkle, others
, 2019

139. Impact of etch processes on the chemistry and surface states of the topological insulator Bi2Se3
Adam T Barton, Lee A Walsh, Christopher M Smyth, Xiaoye Qin, Rafik Addou, Christopher Cormier, Paul K Hurley, Robert M Wallace, Christopher L Hinkle
ACS applied materials \& interfaces, 2019, Vol. 11, pp. 32144--32150

138. A roadmap for electronic grade 2D materials
Natalie Briggs, Shruti Subramanian, Zhong Lin, Xufan Li, Xiaotian Zhang, Kehao Zhang, Kai Xiao, David Geohegan, Robert Wallace, Long-Qing Chen, others
2D Materials, 2019, Vol. 6, pp. 022001

137. Spin Transfer Torques in Monolayer WSe 2/PMA Heterostructures
Steve Novakov, Nguyen Vu, Bhakti Jariwala, Azim Kozhakhmetov, Guanyu Zhou, Christopher Hinkle, Joshua Robinson, John Heron
, 2019, Vol. 2019, pp. K38--001

136. WSe (2- x) Tex alloys grown by molecular beam epitaxy
Adam T Barton, Ruoyu Yue, Lee A Walsh, Guanyu Zhou, Christopher Cormier, Christopher M Smyth, Rafik Addou, Luigi Colombo, Robert M Wallace, Christopher L Hinkle
2D Materials, 2019, Vol. 6, pp. 045027

135. Contact engineering for dual-gate MoS2 transistors using O2 plasma exposure
Pavel Bolshakov, Christopher M Smyth, Ava Khosravi, Peng Zhao, Paul K Hurley, Christopher L Hinkle, Robert M Wallace, Chadwin D Young
ACS Applied Electronic Materials, 2019, Vol. 1, pp. 210--219

134. Origins of fermi-level pinning between molybdenum dichalcogenides (MoSe2, MoTe2) and bulk metal contacts: interface chemistry and band alignment
Christopher M Smyth, Rafik Addou, Christopher L Hinkle, Robert M Wallace
The Journal of Physical Chemistry C, 2019, Vol. 123, pp. 23919--23930

133. Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics
Pavel Bolshakov, Ava Khosravi, Peng Zhao, PK Hurley, Christopher L Hinkle, Robert M Wallace, Chadwin D Young
, 2019

132. Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics
Pavel Bolshakov, Ava Khosravi, Peng Zhao, Paul K Hurley, Christopher L Hinkle, Robert M Wallace, Chadwin D Young
Applied Physics Letters, 2018, Vol. 112

131. Engineering the palladium--WSe2 interface chemistry for field effect transistors with high-performance hole contacts
Christopher M Smyth, Lee A Walsh, Pavel Bolshakov, Massimo Catalano, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon J Kim, Chadwin D Young, Christopher L Hinkle, others
ACS Applied Nano Materials, 2018, Vol. 2, pp. 75--88

130. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
Jaewoo Shim, Sang-Hoon Bae, Wei Kong, Doyoon Lee, Kuan Qiao, Daniel Nezich, Yong Ju Park, Ruike Zhao, Suresh Sundaram, Xin Li, others
Science, 2018, Vol. 362, pp. 665--670

129. INTERFACE REACTION AND FERMI LEVEL PINNING MECHANISMS BETWEEN PALLADIUM CONTACTS AND TELLURIUM FILMS GROWN BY MOLECULAR BEAM EPITAXY
Christopher M Smyth, Guanyu Zhou, Adam T Barton, Robert M Wallace, Christopher L Hinkle
CHARACTERIZING AND ENGINEERING THE METAL CONTACT INTERFACE IN 1D AND 2D CHALCOGENIDE SYSTEMS, 2018, pp. 343

128. Contact Engineering for Dual-Gate MoS2 Transistors with O2 Plasma Exposure
P Bolshakov, CM Smyth, A Khosravi, P Zhao, A Azcatl, G Mirabelli, PK Hurley, CL Hinkle, RM Wallace, CD Young
, 2018

127. Electrical characterization of process induced effects on non-silicon devices
Chadwin D Young, Pavel Bolshakov, Rodolfo A Rodriguez-Davila, Peng Zhao, Ava Khosravi, Israel Mejia, Manuel Quevedo-Lopez, Christopher L Hinkle, Robert M Wallace
, 2018, pp. 173--176

126. ENGINEERING THE WSE2--PALLADIUM INTERFACE CHEMISTRY FOR FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE HOLE CONTACTS
Christopher M Smyth, Lee A Walsh, Pavel Bolshakov, Massimo Catalano, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon J Kim, Chadwin D Young, Christopher L Hinkle, others
CHARACTERIZING AND ENGINEERING THE METAL CONTACT INTERFACE IN 1D AND 2D CHALCOGENIDE SYSTEMS, 2018, pp. 239

125. Electric double layer Esaki tunnel junction in a 40-nm-length, WSe2 channel grown by molecular beam epitaxy on Al203
Paolo Paletti, Alan Seabaugh, Ruoyu Yue, Christopher Hinkle
, 2018, pp. 110--113

124. Quantum confinement and interface states in ZnO nanocrystalline thin-film transistors
Richard A Chapman, Rodolfo A Rodriguez-Davila, William G Vandenberghe, Christopher L Hinkle, Israel Mejia, Amitava Chatterjee, Manuel A Quevedo-Lopez
IEEE Transactions on Electron Devices, 2018, Vol. 65, pp. 1787--1795

123. ENGINEERING THE INTERFACE CHEMISTRY FOR N-TYPE SCANDIUM CONTACTS TO HIGH--PERFORMANCE WSE2 DEVICES
Christopher M Smyth, Lee A Walsh, Pavel Bolshakov, Massimo Catalano, Michael Schmidt, Brendan Sheehan, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon J Kim, others
CHARACTERIZING AND ENGINEERING THE METAL CONTACT INTERFACE IN 1D AND 2D CHALCOGENIDE SYSTEMS, 2018, pp. 294

122. CHARACTERIZING AND ENGINEERING THE MOS2-TITANIUM CONTACT INTERFACE CHEMISTRY
Christopher M Smyth, Stephen McDonnell, Pavel Bolshakov, Chadwin D Young, Christopher L Hinkle, Robert M Wallace
CHARACTERIZING AND ENGINEERING THE METAL CONTACT INTERFACE IN 1D AND 2D CHALCOGENIDE SYSTEMS, 2018, pp. 128

121. Molecular beam epitaxy of transition metal dichalcogenides
Lee A Walsh, Rafik Addou, Robert M Wallace, Christopher L Hinkle
, 2018, pp. 515--531

120. Fermi level manipulation through native doping in the topological insulator Bi2Se3
Lee A Walsh, Avery J Green, Rafik Addou, Westly Nolting, Christopher R Cormier, Adam T Barton, Tyler R Mowll, Ruoyu Yue, Ning Lu, Jiyoung Kim, others
ACS nano, 2018, Vol. 12, pp. 6310--6318

119. Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance-voltage analysis
Ava Khosravi, Angelica Azcatl, Pavel Bolshakov, Gioele Mirabelli, Peng Zhao, Enrico Caruso, Christopher L Hinkle, Paul K Hurley, Robert M Wallace, Chadwin D Young
, 2018

118. Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance--voltage analysis
Peng Zhao, Ava Khosravi, Angelica Azcatl, Pavel Bolshakov, Gioele Mirabelli, Enrico Caruso, Christopher L Hinkle, Paul K Hurley, Robert M Wallace, Chadwin D Young
2D Materials, 2018, Vol. 5, pp. 031002

117. Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2
Ava Khosravi, Rafik Addou, Christopher M Smyth, Ruoyu Yue, Christopher R Cormier, Jiyoung Kim, Christopher L Hinkle, Robert M Wallace
APL Materials, 2018, Vol. 6

116. High-mobility helical tellurium field-effect transistors enabled by transfer-free, low-temperature direct growth
Guanyu Zhou, Rafik Addou, Qingxiao Wang, Shahin Honari, Christopher R Cormier, Lanxia Cheng, Ruoyu Yue, Christopher M Smyth, Akash Laturia, Jiyoung Kim, others
Advanced Materials, 2018, Vol. 30, pp. 1803109

115. EFFECTS OF DEPOSITION CONDITIONS ON THE INTERFACE CHEMISTRY BETWEEN CONTACT METALS AND TUNGSTEN CHALCOGENIDES
Christopher M Smyth, Rafik Addou, Stephen McDonnell, Christopher L Hinkle, Robert M Wallace
CHARACTERIZING AND ENGINEERING THE METAL CONTACT INTERFACE IN 1D AND 2D CHALCOGENIDE SYSTEMS, 2018, pp. 161

114. Dislocation driven spiral and non-spiral growth in layered chalcogenides
Yifan Nie, Adam T Barton, Rafik Addou, Yongping Zheng, Lee A Walsh, Sarah M Eichfeld, Ruoyu Yue, Christopher R Cormier, Chenxi Zhang, Qingxiao Wang, others
Nanoscale, 2018, Vol. 10, pp. 15023--15034

113. Manipulation of room-temperature valley-coherent exciton-polaritons in atomically thin crystals by real and artificial magnetic fields
Long Qing Chen, Xiaotian Zhang, Mauricio Terrones, Xufan Li, Swastik Kar, Christopher L Hinkle, Joshua A Robinson, Kasra Momeni, Zhong Lin, Joan M Redwing, others
2D Materials, 2018, Vol. 7, pp. 035025

112. Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides
Ruoyu Yue, Yifan Nie, Lee A Walsh, Rafik Addou, Chaoping Liang, Ning Lu, Adam T Barton, Hui Zhu, Zifan Che, Diego Barrera, others
2D Materials, 2017, Vol. 4, pp. 045019

111. WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions
Christopher M Smyth, Rafik Addou, Stephen McDonnell, Christopher L Hinkle, Robert M Wallace
2D Materials, 2017, Vol. 4, pp. 025084

110. Comprehensive capacitance--voltage simulation and extraction tool including quantum effects for high-$ k $ on SixGe1- x and InxGa1- xAs: Part II—Fits and extraction from experimental data
Sarkar RM Anwar, William G Vandenberghe, Gennadi Bersuker, Dmitry Veksler, Giovanni Verzellesi, Luca Morassi, Rohit V Galatage, Sumit Jha, Creighton Buie, Adam T Barton, others
IEEE Transactions on Electron Devices, 2017, Vol. 64, pp. 3794--3801

109. Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
Peng Zhao, Angelica Azcatl, Pavel Bolshakov, Jiyoung Moon, Christopher L Hinkle, Paul K Hurley, Robert M Wallace, Chadwin D Young
Journal of Vacuum Science \& Technology B, 2017, Vol. 35

108. W Te2 thin films grown by beam-interrupted molecular beam epitaxy
Lee A Walsh, Ruoyu Yue, Qingxiao Wang, Adam T Barton, Rafik Addou, Christopher M Smyth, Hui Zhu, Jiyoung Kim, Luigi Colombo, Moon J Kim, others
2D Materials, 2017, Vol. 4, pp. 025044

107. van der Waals epitaxy: 2D materials and topological insulators
Lee A Walsh, Christopher L Hinkle
Applied Materials Today, 2017, Vol. 9, pp. 504--515

106. Investigation of critical interfaces in few-layer MoS2 field effect transistors with high-k dielectrics
Chadwin D Young, P Bolshakov, P Zhao, C Smyth, A Khosravi, PK Hurley, Christopher L Hinkle, Robert M Wallace
ECS Transactions, 2017, Vol. 80, pp. 219

105. Probing interface defects in top-gated MoS2 transistors with impedance spectroscopy
Peng Zhao, Angelica Azcatl, Yuri Y Gomeniuk, Pavel Bolshakov, Michael Schmidt, Stephen J McDonnell, Christopher L Hinkle, Paul K Hurley, Robert M Wallace, Chadwin D Young
ACS applied materials \& interfaces, 2017, Vol. 9, pp. 24348--24356

104. Memory devices based on gate controlled ferromagnestism and spin-polarized current injection
William G Vandenberghe, Christopher L Hinkle, Massimo V Fischetti
, 2017

103. Interface chemistry of contact metals and ferromagnets on the topological insulator Bi2Se3
Lee A Walsh, Christopher M Smyth, Adam T Barton, Qingxiao Wang, Zifan Che, Ruoyu Yue, Jiyoung Kim, Moon J Kim, Robert M Wallace, Christopher L Hinkle
The Journal of Physical Chemistry C, 2017, Vol. 121, pp. 23551--23563

102. Devices having inhomogeneous silicide schottky barrier contacts
Deborah Jean Riley, Judy Browder Shaw, Christopher L Hinkle, Creighton T Buie
, 2017

101. Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy
Hong Dong, Cheng Gong, Rafik Addou, Stephen McDonnell, Angelica Azcatl, Xiaoye Qin, Weichao Wang, Weihua Wang, Christopher L Hinkle, Robert M Wallace
ACS applied materials \& interfaces, 2017, Vol. 9, pp. 38977--38983

100. Oxide-related defects in quantum dot containing Si-rich silicon nitride films
Lee A Walsh, Shakil Mohammed, Siddharth C Sampat, Yves J Chabal, Anton V Malko, Christopher L Hinkle
Thin Solid Films, 2017, Vol. 636, pp. 267--272

99. Synthesis and Characterization of Transition Metal Oxides and Dichalcogenides and Their Application in Organic Photovoltaics
Diego Barrera Mendez, Julia WP Hsu, Kyeongjae Cho, Christopher Hinkle, Manuel Quevedo-Lopez
, 2017

98. van der Waals Heterostructures Grown by MBE
Christopher Hinkle
, 2016, Vol. 2016, pp. X14--001

97. Evaluation of few-layer MoS2 transistors with a top gate and HfO2 dielectric
Chadwin D Young, Peng Zhao, Pavel Bolshakov-Barrett, Angelica Azcatl, PK Hurley, YY Gomeniuk, Michael Schmidt, Christopher L Hinkle, Robert M Wallace
ECS Transactions, 2016, Vol. 75, pp. 153

96. Contact metal--MoS2 interfacial reactions and potential implications on MoS2-based device performance
Christopher M Smyth, Rafik Addou, Stephen McDonnell, Christopher L Hinkle, Robert M Wallace
The Journal of Physical Chemistry C, 2016, Vol. 120, pp. 14719--14729

95. Devices having inhomogeneous silicide schottky barrier contacts
Deborah Jean Riley, Judy Browder Shaw, Christopher L Hinkle, Creighton T Buie
, 2016

94. Physico-Chemical Characterisation Metal and MoS Interfaces
Stephen McDonnell, Rafik Addou, Christopher L Hinkle, Robert M Wallace
2D Materials for Nanoelectronics, 2016, pp. 163

93. Comprehensive Capacitance-Voltage Analysis Including Quantum Effects for High-K Interfaces on Germanium and Other Alternative Channel Materials
Christopher L Hinkle
, 2016

92. Covalent nitrogen doping and compressive strain in MoS2 by remote N2 plasma exposure
Angelica Azcatl, Xiaoye Qin, Abhijith Prakash, Chenxi Zhang, Lanxia Cheng, Qingxiao Wang, Ning Lu, Moon J Kim, Jiyoung Kim, Kyeongjae Cho, others
Nano letters, 2016, Vol. 16, pp. 5437--5443

91. MoS2--titanium contact interface reactions
Stephen McDonnell, Christopher Smyth, Christopher L Hinkle, Robert M Wallace
ACS applied materials \& interfaces, 2016, Vol. 8, pp. 8289--8294

90. Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy
AT Barton, R Yue, S Anwar, H Zhu, X Peng, S McDonnell, N Lu, R Addou, L Colombo, MJ Kim, others
Microelectronic Engineering, 2015, Vol. 147, pp. 306--309

89. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy
Ruoyu Yue, Adam T Barton, Hui Zhu, Angelica Azcatl, Luis F Pena, Jian Wang, Xin Peng, Ning Lu, Lanxia Cheng, Rafik Addou, others
ACS nano, 2015, Vol. 9, pp. 474--480

88. Impurities and electronic property variations of natural MoS2 crystal surfaces
Rafik Addou, Stephen McDonnell, Diego Barrera, Zaibing Guo, Angelica Azcatl, Jian Wang, Hui Zhu, Christopher L Hinkle, Manuel Quevedo-Lopez, Husam N Alshareef, others
ACS nano, 2015, Vol. 9, pp. 9124--9133

87. Electrical characterization of top-gated molybdenum disulfide metal--oxide--semiconductor capacitors with high-k dielectrics
P Zhao, PB Vyas, S McDonnell, P Bolshakov-Barrett, A Azcatl, CL Hinkle, PK Hurley, RM Wallace, CD Young
Microelectronic Engineering, 2015, Vol. 147, pp. 151--154

86. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, RM Wallace, EM Vogel
Journal of Applied Physics, 2014, Vol. 116

85. Chemical bonding and defect states of LPCVD grown silicon-rich Si3N4 for quantum dot applications
Shakil Mohammed, Michael T Nimmo, Anton V Malko, Christopher L Hinkle
Journal of Vacuum Science \& Technology A, 2014, Vol. 32

84. Chemical Synthesis, Computational Modeling, and Surface Reactions of Silicon Nanotube Anodes and Silicate Cathodes for Lithium Ion Batteries
Christopher Hinkle
, 2014, Vol. 2014, pp. Y53--007

83. Accumulation Capacitance Frequency Dispersion of Ⅲ-Ⅴ Metal-Insulator-Semiconductor Devices due to Disorder Induced Gap States
RV Galatage, Dmitry M Zhernokletov, Hong Dong, Barry Brennan, Christopher L Hinkle, Robert M Wallace, EM Vogel
, 2014

82. Chemical Bonding and Defect States of LPCVD Grown Silicon-Rich Si₃N₄ for Quantum Dot Applications
Shakil Mohammed, Michael T Nimmo, Anton V Malko, Christopher L Hinkle
, 2014

81. Silicon interfacial passivation layer chemistry for high-k/InP interfaces
Hong Dong, Wilfredo Cabrera, Xiaoye Qin, Barry Brennan, Dmitry Zhernokletov, Christopher L Hinkle, Jiyoung Kim, Yves J Chabal, Robert M Wallace
ACS Applied Materials \& Interfaces, 2014, Vol. 6, pp. 7340--7345

80. Defect-dominated doping and contact resistance in MoS2
Stephen McDonnell, Rafik Addou, Creighton Buie, Robert M Wallace, Christopher L Hinkle
ACS nano, 2014, Vol. 8, pp. 2880--2888

79. Defect-dominated doping and contact resistance in MoS2
Stephen McDonnell, Rafik Addou, Creighton Buie, Robert M Wallace, Christopher L Hinkle
ACS nano, 2014, Vol. 8, pp. 2880--2888

78. Chemical and electrical characterization of the HfO2/InAlAs interface
Barry Brennan, Rohit V Galatage, K Thomas, Emanuele Pelucchi, Paul K Hurley, Jiyoung Kim, Christopher L Hinkle, EM Vogel, Robert M Wallace
Journal of Applied Physics, 2013, Vol. 114

77. Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, RM Wallace, EM Vogel
Applied Physics Letters, 2013, Vol. 102

76. In situ study of HfO2 atomic layer deposition on InP (100)
H Dong, B Brennan, D Zhernokletov, J Kim, CL Hinkle, RM Wallace
Applied Physics Letters, 2013, Vol. 102

75. III-V/high-k defects: DIGS vs. border traps
Christopher L Hinkle, Rohit V Galatage, Hong Dong, Sarkar RM Anwar, Barry Brennan, Robert M Wallace, Eric M Vogel
ECS Transactions, 2013, Vol. 53, pp. 161

74. HfO2 on MoS2 by atomic layer deposition: adsorption mechanisms and thickness scalability
Stephen McDonnell, Barry Brennan, Angelica Azcatl, Ning Lu, Hong Dong, Creighton Buie, Jiyoung Kim, Christopher L Hinkle, Moon J Kim, Robert M Wallace
ACS nano, 2013, Vol. 7, pp. 10354--10361

73. In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP
Hong Dong, Santosh KC, Xiaoye Qin, Barry Brennan, Steven McDonnell, Dmitry Zhernokletov, Christopher L Hinkle, Jiyoung Kim, Kyeongjie Cho, Robert M Wallace
Journal of Applied Physics, 2013, Vol. 114

72. In situ study of atomic layer deposition Al2O3 on GaP (100)
H Dong, B Brennan, X Qin, DM Zhernokletov, CL Hinkle, J Kim, RM Wallace
Applied Physics Letters, 2013, Vol. 103

71. Indium diffusion through high-k dielectrics in high-k/InP stacks
H Dong, W Cabrera, RV Galatage, Santosh KC, B Brennan, X Qin, S McDonnell, D Zhernokletov, CL Hinkle, K Cho, others
Applied Physics Letters, 2013, Vol. 103

70. In Situ Studies of III-V Surfaces and High-K Atomic Layer Deposition
B Brennan, S McDonnell, D Zhernokletov, H Dong, CL Hinkle, J Kim, RM Wallace
Solid State Phenomena, 2013, Vol. 195, pp. 90--94

69. In situ study of atomic layer deposition Al $\{$sub 2$\
H Dong, B Brennan, X Qin, CL Hinkle, J Kim, RM Wallace, DM Zhernokletov
Applied Physics Letters, 2013, Vol. 103

68. Effect of ALD oxidant and channel doping on positive bias stress characteristics of surface channel In 0.53 Ga 0.47 As nMOSFETs
CD Young, RJW Hill, K Matthews, W-E Wang, C Hinkle, RM Wallace, W-Y Loh, C Hobbs, PD Kirsch, R Jammy
, 2013, pp. 1--2

67. PtSi dominated Schottky barrier heights of Ni (Pt) Si contacts due to Pt segregation
J Chan, M Balakchiev, AM Thron, RA Chapman, D Riley, SC Song, A Jain, J Blatchford, JB Shaw, K van Benthem, others
Applied Physics Letters, 2013, Vol. 102

66. In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0. 25Ga0. 75N
Xiaoye Qin, Barry Brennan, Hong Dong, Jiyoung Kim, Christopher L Hinkle, Robert M Wallace
Journal of Applied Physics, 2013, Vol. 113

65. Formation of pre-silicide layers below Ni1- xPtxSi/Si interfaces
AM Thron, TJ Pennycook, J Chan, W Luo, A Jain, D Riley, J Blatchford, J Shaw, EM Vogel, CL Hinkle, others
Acta materialia, 2013, Vol. 61, pp. 2481--2488

64. Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation
Christopher Hinkle, Jack Chan, Javier Mendez, Richard Chapman, Eric Vogel, Deborah Riley, Amitabh Jain, SC Song, KY Lim, James Blatchford, others
, 2012, pp. 198--202

63. Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems
S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, FS Aguirre-Tostado, DM Zhernokletov, CL Hinkle, J Kim, RM Wallace
Applied Physics Letters, 2012, Vol. 100

62. Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
CL Hinkle, RV Galatage, RA Chapman, EM Vogel, Husam N Alshareef, C Freeman, M Christensen, E Wimmer, H Niimi, A Li-Fatou, others
Applied Physics Letters, 2012, Vol. 100

61. Substitutional and Interstitial Diffusion of Ni across the NiSi/Si interface
A Thron, K van Benthem, J Chan, CL Hinkle, TJ Pennycook, SJ Pennycook, A Jain
Microscopy and Microanalysis, 2012, Vol. 18, pp. 344--345

60. Progression of solid electrolyte interphase formation on hydrogenated amorphous silicon anodes for lithium-ion batteries
David E Arreaga-Salas, Amandeep K Sra, Katy Roodenko, Yves J Chabal, Christopher L Hinkle
The Journal of Physical Chemistry C, 2012, Vol. 116, pp. 9072--9077

59. In situ surface pre-treatment study of GaAs and In0. 53Ga0. 47As
B Brennan, DM Zhernokletov, H Dong, CL Hinkle, J Kim, RM Wallace
Applied Physics Letters, 2012, Vol. 100

58. Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering
J Chan, NY Martinez, JJD Fitzgerald, AV Walker, RA Chapman, D Riley, A Jain, CL Hinkle, EM Vogel
Applied Physics Letters, 2011, Vol. 99

57. On the calculation of effective electric field in In0. 53Ga0. 47As surface channel metal-oxide-semiconductor field-effect-transistors
AM Sonnet, RV Galatage, Paul K Hurley, Emanuele Pelucchi, Kevin K Thomas, A Gocalinska, J Huang, N Goel, G Bersuker, WP Kirk, others
Applied Physics Letters, 2011, Vol. 98

56. High-k oxide growth on III-V surfaces: Chemical bonding and MOSFET performance
Christopher Hinkle, Barry Brennan, Stephen McDonnell, Marko Milojevic, Arif Sonnet, Dmitry Zhernokletov, Rohit Galatage, Eric Vogel, Robert Wallace
ECS Transactions, 2011, Vol. 35, pp. 403

55. Remote phonon and surface roughness limited universal electron mobility of In0. 53Ga0. 47As surface channel MOSFETs
AM Sonnet, RV Galatage, PK Hurley, E Pelucchi, K Thomas, A Gocalinska, J Huang, N Goel, G Bersuker, WP Kirk, others
Microelectronic engineering, 2011, Vol. 88, pp. 1083--1086

54. Band-Edge Effective Work Functions by Controlling HfO2/TiN Interfacial Composition for Gate-Last CMOS
Christopher Hinkle, Rohit Galatage, Richard Chapman, Eric Vogel, Husam Niman Alshareef, Clive Freeman, Erich Wimmer, Hiro Niimi, Andrei Li-Fatou, James Chambers, others
ECS Transactions, 2011, Vol. 35, pp. 285

53. Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, RM Wallace, EM Vogel
Applied Physics Letters, 2011, Vol. 99

52. Optimisation of the ammonium sulphide (NH $\{$sub 4$\
B Brennan, M Milojevic, CL Hinkle, FS Aguirre-Tostado, G Hughes, RM Wallace, others
Applied Surface Science, 2011, Vol. 257

51. Is interfacial chemistry correlated to gap states for high-k/III--V interfaces?
W Wang, CL Hinkle, EM Vogel, K Cho, RM Wallace
Microelectronic Engineering, 2011, Vol. 88, pp. 1061--1065

50. SEI Formation Kinetics on a-Silicon Nanotube Anodes
David Arreaga-Salas, Amandeep Sra, E Roodenko, Yves J Chabal, Christopher Hinkle
, 2011, pp. 1303

49. Interfacial chemistry of oxides on InxGa (1- x) As and implications for MOSFET applications
CL Hinkle, EM Vogel, Peide D Ye, RM Wallace
Current Opinion in Solid State and Materials Science, 2011, Vol. 15, pp. 188--207

48. In-situ characterization of Ga2O passivation of In0. 53Ga0. 47As prior to high-k dielectric atomic layer deposition
M Milojevic, Rocio Contreras-Guerrero, E O’Connor, B Brennan, Paul K Hurley, J Kim, CL Hinkle, Robert M Wallace
Applied Physics Letters, 2011, Vol. 99

47. Optimisation of the ammonium sulphide (NH4) 2S passivation process on In0. 53Ga0. 47As
B Brennan, M Milojevic, CL Hinkle, FS Aguirre-Tostado, G Hughes, RM Wallace
Applied surface science, 2011, Vol. 257, pp. 4082--4090

46. Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt
Christopher L Hinkle, Rohit V Galatage, Richard A Chapman, Eric M Vogel, Husam N Alshareef, C Freeman, Erich Wimmer, Hiroaki Niimi, A Li-Fatou, Judy B Shaw, others
, 2010, pp. 183--184

45. Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks
CL Hinkle, RV Galatage, RA Chapman, EM Vogel, Husam N Alshareef, C Freeman, E Wimmer, H Niimi, A Li-Fatou, JB Shaw, others
Applied Physics Letters, 2010, Vol. 96

44. Impact of semiconductor and interface-state capacitance on metal/high-k/GaAs capacitance--voltage characteristics
Arif M Sonnet, Christopher L Hinkle, Dawei Heh, Gennadi Bersuker, Eric M Vogel
IEEE transactions on electron devices, 2010, Vol. 57, pp. 2599--2606

43. Interfacial chemistry of oxides on III-V compound semiconductors
Marko Milojevic, Christopher L Hinkle, Eric M Vogel, Robert M Wallace
Fundamentals of III-V Semiconductor MOSFETs, 2010, pp. 131--172

42. Interfacial engineering of InGaAs/high-k metal-oxide-semiconductor field effect transistors (MOSFETs)
AM Sonnet, RV Galatage, MN Jivani, M Milojevic, RA Chapman, CL Hinkle, RM Wallace, EM Vogel
, 2009, pp. 46--49

41. The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding
CL Hinkle, M Milojevic, EM Vogel, RM Wallace
Applied Physics Letters, 2009, Vol. 95

40. Semiconductor devices having an interfacial dielectric layer and related methods
Gerald Lucovsky, Christopher L Hinkle
, 2009

39. Surface passivation and implications on high mobility channel performance
CL Hinkle, M Milojevic, EM Vogel, RM Wallace
Microelectronic engineering, 2009, Vol. 86, pp. 1544--1549

38. Surface studies of III-V materials: oxidation control and device implications
Christopher Hinkle, Marko Milojevic, Arif Sonnet, Hyunchul Kim, Jiyoung Kim, Eric M Vogel, Robert M Wallace
ECS Transactions, 2009, Vol. 19, pp. 387

37. Extraction of the Effective Mobility of Formula Not Shown MOSFETS
CL Hinkle, AM Sonnet, RA Chapman, EM Vogel
IEEE ELECTRON DEVICE LETTERS, 2009, Vol. 30, pp. 316--318

36. Impact of surface preparations on the transport characteristics of In x Ga 1- x As metal-oxide-semiconductor field effect transistors (MOSFETs)
AM Sonnet, RV Galatage, MN Jivani, M Milojevic, P Kirsch, J Huang, RA Chapman, CL Hinkle, RM Wallace, EM Vogel
, 2009, pp. 1--2

35. In-situ Studies of Atomic Layer Deposition Studies on High-Mobility Channel Materials
Marko Milojevic, Arif M Sonnet, Christopher L Hinkle, Hyun C Kim, Eric M Vogel, Jiyoung Kim, Robert M Wallace
ECS Transactions, 2009, Vol. 25, pp. 115

34. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
CL Hinkle, M Milojevic, Barry Brennan, Arif M Sonnet, FS Aguirre-Tostado, GJ Hughes, EM Vogel, RM Wallace
Applied Physics Letters, 2009, Vol. 94

33. Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4) 2S passivated GaAs (100) surfaces
M Milojevic, CL Hinkle, FS Aguirre-Tostado, HC Kim, EM Vogel, J Kim, RM Wallace
Applied Physics Letters, 2008, Vol. 93

32. GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, Stephen McDonnell, GJ Hughes, M Milojevic, B Lee, FS Aguirre-Tostado, KJ Choi, HC Kim, others
Applied Physics Letters, 2008, Vol. 92

31. Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2--HfO2--SiO2--Si stacks
YM Strzhemechny, M Bataiev, SP Tumakha, SH Goss, CL Hinkle, CC Fulton, G Lucovsky, LJ Brillson
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2008, Vol. 26, pp. 232--243

30. Indium stability on InGaAs during atomic H surface cleaning
FS Aguirre-Tostado, M Milojevic, CL Hinkle, EM Vogel, RM Wallace, Stephen McDonnell, GJ Hughes
Applied Physics Letters, 2008, Vol. 92

29. Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics
CL Hinkle, Arif M Sonnet, M Milojevic, FS Aguirre-Tostado, HC Kim, J Kim, RM Wallace, EM Vogel
Applied Physics Letters, 2008, Vol. 93

28. Performance enhancement of n-channel inversion type InxGa1- xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer
AM Sonnet, CL Hinkle, MN Jivani, RA Chapman, GP Pollack, RM Wallace, EM Vogel
Applied Physics Letters, 2008, Vol. 93

27. Half-cycle atomic layer deposition reaction studies of Al2O3 on In0. 2Ga0. 8As (100) surfaces
M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, RM Wallace
Applied Physics Letters, 2008, Vol. 93

26. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates
FS Aguirre-Tostado, M Milojevic, KJ Choi, HC Kim, CL Hinkle, EM Vogel, J Kim, T Yang, Y Xuan, PD Ye, others
Applied Physics Letters, 2008, Vol. 93

25. Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation
CL Hinkle, Arif M Sonnet, EM Vogel, Stephen McDonnell, GJ Hughes, M Milojevic, B Lee, FS Aguirre-Tostado, KJ Choi, J Kim, others
Applied Physics Letters, 2007, Vol. 91

24. Band Edge Traps at Spectroscopically-Detected O-Atom Vacancies in Nanocrystalline ZrO2 and HfO2: An Engineering Solution for Elimination of O-Atom Vacancy Defects in Non-crystalline Ternary Silicate Alloys
Gerald Lucovsky, J Luning, NA Stoute, H Seo, CL Hinkle, B Ju
ECS Transactions, 2006, Vol. 1, pp. 381

23. Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2
G Lucovsky, CL Hinkle, CC Fulton, NA Stoute, H Seo, L{\"u
Radiation Physics and Chemistry, 2006, Vol. 75, pp. 2097--2101

22. Fixed Charge Reduction and Tunneling in Stacked Dielectrics
Christopher Hinkle, others
, 2005

21. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
CL Hinkle, C Fulton, RJ Nemanich, G Lucovsky
Applied surface science, 2004, Vol. 234, pp. 240--245

20. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers
CL Hinkle, C Fulton, RJ Nemanich, G Lucovsky
Surface Science, 2004, Vol. 566, pp. 1185--1189

19. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf (Zr) silicate alloys
G Lucovsky, GB Rayner, D Kang, CL Hinkle, JG Hong
Applied surface science, 2004, Vol. 234, pp. 429--433

18. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr (Hf) silicate alloys
G Lucovsky, GB Rayner, D Kang, CL Hinkle, JG Hong
Surface science, 2004, Vol. 566, pp. 772--776

17. Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro-and nano-crystallinity
GB Rayner Jr, D Kang, CL Hinkle, JG Hong, G Lucovsky
Microelectronic engineering, 2004, Vol. 72, pp. 304--309

16. Effect of N 2 plasma on yttrium oxide and yttrium--oxynitride dielectrics
D Niu, RW Ashcraft, C Hinkle, GN Parsons
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films, 2004, Vol. 22, pp. 445--451

15. A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices
CL Hinkle, C Fulton, RJ Nemanich, G Lucovsky
Microelectronic engineering, 2004, Vol. 72, pp. 257--262

14. Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
Lisa F Edge, Darrell G Schlom, RT Brewer, YJ Chabal, Josh R Williams, Scott A Chambers, C Hinkle, G Lucovsky, Y Yang, S Stemmer, others
Applied physics letters, 2004, Vol. 84, pp. 4629--4631

13. A Novel Approach for Determination of Tunneling Mass, m\~{
CL Hinkle, C Fulton, RJ Nemanich, G Lucovsky
SOLID STATE DEVICES AND MATERIALS, 2003, pp. 168--169

12. Resonant tunneling in stacked dielectrics: a novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics
CL Hinkle, C Fulton, RJ Nemanich, G Lucovsky
, 2003, pp. 80--85

11. Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications
RS Johnson, JG Hong, C Hinkle, G Lucovsky
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002, Vol. 20, pp. 1126--1131

10. Electron trapping in non-crystalline Ta-and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices
RS Johnson, JG Hong, C Hinkle, G Lucovsky
Solid-State Electronics, 2002, Vol. 46, pp. 1799--1805

9. Hydrodynamic instabilities in young supernova remnants
Christopher L Hinkle, John M Blondin
, 2001, Vol. 565, pp. 81--84

8. Investigation of postoxidation thermal treatments of Si/SiO 2 interface in relationship to the kinetics of amorphous Si suboxide decomposition
BJ Hinds, F Wang, DM Wolfe, CL Hinkle, G Lucovsky
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1998, Vol. 16, pp. 2171--2176

7. Silicon and Ultrathin Oxides-Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition
BJ Hinds, F Wang, DM Wolfe, CL Hinkle, G Lucovsky
Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, 1998, Vol. 16, pp. 2171--2176

6. Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiO2 matrix
BJ Hinds, F Wang, DM Wolfe, CL Hinkle, G Lucovsky
Journal of non-crystalline solids, 1998, Vol. 227, pp. 507--512

5. Two-dimensional electric-double-layer Esaki diode
Alan Seabaugh, Christopher Hinkle, Paolo Paletti, Ruoyu Yue, Susan Fullerton-Shirey
, 1900

4. Engineering the interface chemistry for scandium electron contacts in WSE2 transistors and diodes
Brendan Sheehan, Christopher Hinkle, Christopher Smyth, Jiyoung Kim, Lee Walsh, Luhua Wang, Massimo Catalano, Michael Schmidt, Moon Kim, Pavel Bolshakov, others
, 1900

3. LANTHANUM ALUMINATE ON SILICON FOR ALTERNATIVE GATE DIELECTRIC APPLICATIONS
LF Edge, V Vaithyanathan, J Lettieri, DG Schlom, SA Chambers, C Hinkle, G Lucovsky, Y Yang, S Stemmer, H Li, others

2. Detection of diffused III-V materials in high-k oxides during atomic layer deposition and annealing
W Cabrera, H Dong, B Brennan, {\'E O’Connor

1. NITRIDATION OF YTTRIUM OXIDE GATE DIELECTRICS USING N2 PLASMA
D Niu, RW Ashcraft, C Hinkle, GN Parsons