1. Home ›
  2. Publications

Publications

View journal publications on Google Scholar >>

 

93. J. Shim, S.-H. Bae, W. Kong, D. Lee, K. Qiao, D. Nezich, Y. J. Park, R. Zhao, S. Sundram, X. Li, H. Yeon, C. Choi, H. Kim, R. Yue, G. Zhou, Y. Ou, K. Lee, J. Moodera, X. Zhao, J-H. Ahn, C. L. Hinkle, A. Ougazzaden, J. Kim, “Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials,” Science 362, 665 (2018).

 

92. C. M. Smyth, L. A. Walsh, P. Bolshakov, M. Catalano, R. Addou, L. Wang, J. Kim, M. J. Kim, C. D. Young, C. L. Hinkle, R. M. Wallace,  "Engineering the Palladium-WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts," ACS Applied Nano Materials 2, 75 (2018).

 

91. G. Zhou, R. Addou, Q. Wang, S. Honari, C. R. Cormier, L. Cheng, R. Yue, C. M. Smyth, A. Laturia, J. Kim, W. G. Vandenberghe, M. J. Kim, R. M. Wallace, C. L. Hinkle, “High-mobility helical tellurium field effect transistors enabled by transfer-free, low-temperature direct growth,” Advanced Materials 30, 1803109 (2018).

 

90. L. Walsh, A. Green, R. Addou, W. Nolting, C. Cormier, A. Barton, T. Mowll, R. Yue, N. Lu, J. Kim, M. J. Kim, V. LaBella, C. Ventrice, S. McDonnell, W. Vandenberghe, R. M. Wallace, A. Diebold, and C. L. Hinkle, “Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3,” ACS Nano 12, 6310 (2018).

 

89. N. Briggs, S. Subramanian, Z. Lin, X. Li, X. Zhang, K. Zhang, K. Xiao, D. Geohegan, R. Wallace, L-Q. Chen, M. Terrones, A. Ebrahimi, S. Das, J. Redwing, C. L. Hinkle, K. Momeni, A. van Duin, V. Crespi, S. Kar, J. A. Robinson, “A Roadmap for Electronic Grade 2-Dimensional Materials,” accepted in 2D Materials (2018).

 

88. P. Paletti, A. Seabaugh, R. Yue, C. Hinkle, “Electric Double Layer Esaki Tunnel Junction in a 40-nm-Length, WSe2 Channel Grown by Molecular Beam Epitaxy on Al2O3,” European Solid-State Device Research Conference (ESSDERC), 110 (2018).

 

87. P. Bolshakov, A. Khosravi, P. Zhao, P. Hurley, C. L. Hinkle, R. M. Wallace, C. D. Young, “Dual-Gate MoS2 Transistors with sub-10 nm Top-Gate High-k Dielectrics" Applied Physics Letters 112, 253502 (2018).

 

86. P. Zhao, A. Khosravi, A. Azcatl, P. Bolshakov, G. Mirabelli, E. Caruso, C. L. Hinkle, P. Hurley, R. M. Wallace, C. D. Young, “Evaluation of Border Traps and Interface Traps in HfO2/MoS2 Gate Stacks by Capacitance - Voltage Analysis" 2D Materials 5, 031002 (2018).

 

85. A. Khosravi, R. Addou, C. M. Smyth, R. Yue, C. R. Cormier, J. Kim, C. L. Hinkle, R. M. Wallace,  "Covalent Nitrogen Doping in MBE and Bulk WSe2," APL Materials 6, 026603 (2018).

 

84. Y. Nie, A. T. Barton, R. Addou, Y. Zheng, L. A. Walsh, S. M. Eichfeld, R. Yue, C. Cormier, C. Zhang, Q. Wang, C. Liang, J. A. Robinson, M. Kim, W. Vandenberghe, L. Colombo, P-R. Cha, R. M. Wallace, C. L. Hinkle, K. Cho, “Multilayer island growth in layered chalcogenides: morphology, mechanism, and management," Nanoscale 10, 15023 (2018).

 

83. C. D. Young, P. Bolshakov, R. A. Rodriguez, P. Zhao, A. Khosravi, I. Mejia, M. Quevedo-Lopez, C. L. Hinkle, R. M. Wallace, “Electrical characterization of process induced effects on non-silicon devices," IC Design & Technology, 173 (2018).

 

82. R. A. Chapman, R. A. Rodriguez-Davila, W. G. Vandenberghe, C. L. Hinkle, I. Mejia, A. Chatterjee, M. Quevedo-Lopez, “Quantum Confinement and Interface States in ZnO Nanocrystalline Thin Film Transistors," IEEE Transactions on Electron Devices 65, 1787 (2018).

 

81. L. A. Walsh and C. L. Hinkle, “van der Waals Epitaxy: 2D Materials and Topological Insulators," invited review, Applied Materials Today 9, 504 (2017).

 

80. L. A. Walsh, C. M. Smyth, A. T. Barton, Q. Wang, Z. Che, R. Yue, J. Kim, M. J. Kim, R. M. Wallace, C. L. Hinkle,  "Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3," Journal of Physical Chemistry C 121, 23551 (2017).

 

79. R. Yue, Y. Nie, L. A. Walsh, R. Addou, C. Liang, N. Lu, A. T. Barton, H. Zhu, Z. Che, D. Barrera, L. Cheng, P. Cha, Y. J. Chabal, J. W. P. Hsu, J. Kim, M. Kim, L. Colombo, R. M. Wallace, K. Cho, C. L. Hinkle, ”Nucleation and Growth of WSe2: Enabling Large Grain Transition Metal Dichalcogenides," 2D Materials 4, 045019 (2017).

 

78. L. A. Walsh, R. Yue, Q. Wang, A. T. Barton, R. Addou, C. M. Smyth, H. Zhu, J. Kim, L. Colombo, M. J. Kim, R. M. Wallace, C. L. Hinkle,  "WTe2 thin films grown by beam-interrupted molecular beam epitaxy," 2D Materials 4, 025044 (2017).

 

77. H. Dong, C. Gong, R. Addou, S. McDonnell, A. Azcatl, X. Qin, W. Wang, W-H. Wang, C. L. Hinkle, R. M. Wallace, “Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy,” ACS Applied Materials & Interfaces 9, 38977 (2017).

 

76. C. D. Young, P. Bolshakov, P. Zhao, C. Smyth, A. Khosravi, P. K. Hurley, C. L. Hinkle, R. M. Wallace, "Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics," ECS Transactions 80, 219 (2017).

 

75. C. Smyth, R. Addou, S. McDonnell, C. L. Hinkle, R. M. Wallace,  "WSe2 Contact Metal Interface Chemistry and Band Alignment Under High Vacuum and Ultra High Vacuum Deposition Conditions," 2D Materials 4, 025084 (2017).

 

74. S. R. M. Anwar, W. G. Vandenberghe, G. Bersuker, D. Veksler, G. Verzellesi, L. Morassi, R. V. Galatage, S. Jha, C. Buie, A. T. Barton, E. M. Vogel, C. L. Hinkle,  "Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I - Model Description and Validation," IEEE Transactions on Electron Devices 64, 3786 (2017).

 

73. S. R. M. Anwar, W. G. Vandenberghe, G. Bersuker, D. Veksler, G. Verzellesi, L. Morassi, R. V. Galatage, S. Jha, C. Buie, A. T. Barton, E. M. Vogel, C. L. Hinkle,  "Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II - Fits and Extraction from Experimental Data," IEEE Transactions on Electron Devices 64, 3794 (2017).

 

72. L. A. Walsh, S. Mohammed, S. C. Sampat, Y. J. Chabal, A. V. Malko, C. L. Hinkle,  "Oxide-Related Defects in Quantum Dot Containing Si-Rich Silicon Nitride Films," Thin Solid Films 636, 267 (2017).

 

71. P. Zhao, A. Azcatl, Y. Gomeniuk, P. Bolshakov-Barrett, M. Schmidt, S. McDonnell, C. L. Hinkle, P. K. Hurley, R. M. Wallace, C. D. Young,  "Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy," ACS Applied Materials & Interfaces 9, 24348 (2017).

 

70. P. Zhao, A. Azcatl, P. Bolshakov-Barrett,  J. Moon,  C. L. Hinkle, P. K. Hurley, R. M. Wallace, C. D. Young,  "Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric," Journal of Vacuum Science & Technology B 35, 01A118 (2017).70. "MoS2-titanium contact interface reactions," S. McDonnell, C. Smyth, C. L. Hinkle, R. M. Wallace, ACS Applied Materials & Interfaces 8, 8289 (2016).

 

69. C. M. Smyth, R. Addou, S. McDonnell, C. L. Hinkle, R. M. Wallace, "Contact Metal-MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance," Journal of Physical Chemistry C 120, 14719 (2016).

 

68. A. Azcatl, X. Qin, A. Prakash, C. Zhang, L. Cheng, Q. Wang, N. Lu, M. J. Kim, J. Kim, K. Cho, R. Addou, C. L. Hinkle, J. Appenzeller, R. M. Wallace, "Covalent nitrogen doping and compressive strain in MoS2 by remote N2 plasma exposure" Nano Letters 16, 5437 (2016).

 

67. C. D. Young, P. Zhao, P. Bolshakov-Barrett, A. Azcatl, P. K. Hurley, Y. Y. Gomeniuk, M. Schmidt, C. L. Hinkle, R. M. Wallace, "Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric,"  ECS Transactions 75, 153 (2016).

 

66. R. Yue, A. Barton, S. McDonnell, R. Addou, N. Lu, A. Azcatl, H. Zhu, L. Pena, J. Wang, L. Chen, X. Peng, J. W. P. Hsu, J. Kim, M. Kim, L. Colombo, R. M. Wallace, and C. L. Hinkle, "HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy," ACS Nano 9, 474 (2015).

 

65. R. Addou, S. McDonnell, D. Barrera, Z. Guo, A. Azcatl, J. Wang, H. Zhu, C. L. Hinkle, M. Quevedo, H. N. Alshareef, L. Colombo, J. W. P. Hsu, R. M. Wallace, "Impurities and electronic property variations of natural MoS2 crystal surfaces," ACS Nano 9, 9124 (2015).

 

64. A. T. Barton, R. Yue, S. Anwar, H. Zhu, X. Peng, S. McDonnell, N. Lu, R. Addou, L. Colombo, M. J. Kim, R. M. Wallace, and C. L. Hinkle, "Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy," Microelectronic Engineering 147, 306 (2015).

 

63. P. Zhao, P. B. Vyas, S. McDonnell, P. Bolshakov-Barrett, A. Azcatl, C. L. Hinkle, P. K. Hurley, R. M. Wallace, C. D. Young, "Electrical characterization of top-gated molybedenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics,"  Microelectronic Engineering 147, 151 (2015).

 

62. S. McDonnell, R. Addou, C. Buie, R. M. Wallace, and C. L. Hinkle, "Defect Dominated Doping and Contact Resistance in MoS2," ACS Nano 8, 2880 (2014).

 

61. R. V. Galatage, D. M. Zhernokletov, H. Dong, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states," Journal of Applied Physics 116, 014504 (2014).

 

60. H. Dong, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, C. L. Hinkle, J. Kim, Y. J. Chabal, and R. M. Wallace, "Silicon interfacial passivation layer chemistry for high-k/InP interfaces," ACS Applied Materials and Interfaces 6, 7340 (2014).

 

59. S. Mohammed, M. T. Nimmo, A. V. Malko, and C. L. Hinkle, "Chemical bonding and defect states of LPCVD grown silicon-rich Si3N4for quantum dot applications," Journal of Vacuum Science and Technology A 32, 021507 (2014).

 

58. R. C. Longo, S. K. C., K. Cho, K. Roodenko, Y. J. Chabal, A. K. Sra, D. E. Arreaga-Salas, and C. L. Hinkle, "Safer high-performance electrodes, solid electrolytes, and interface reactions for lithium-ion batteries," Material Matters 8, 4 (2013).

 

57. S. McDonnell, B. Brennan, A. Azcatl, N. Lu, H. Dong, C. Buie, J. Kim, C. L. Hinkle, M. J. Kim, and R. M. Wallace, "HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability," ACS Nano 7, 10354 (2013).

 

56. H. Dong, S. K. C., X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle, J. Kim, K. Cho, and R. M. Wallace, "In situ study of the role of substrate temperature during atomic layer deposition of HfO2on InP," Journal of Applied Physics 114, 154105 (2013).

 

55. H. Dong, B. Brennan, X. Qin, D. M. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, "In situ study of atomic layer deposition Al2O3on GaP (100)," Applied Physics Letters 103, 121604 (2013).

 

54. B. Brennan, R. V. Galatage, K. Thomas, E. Pelucchi, P. K. Hurley, J. Kim, C. L. Hinkle, E. M. Vogel, and R. M. Wallace, "Chemical and electrical characterization of the HfO2/InAlAs interface," Journal of Applied Physics 114, 104103 (2013).

 

53. W. Cabrera, H. Dong, B. Brennan, E. O'Connor, P. Carolan, R. Galatage, S. Monaghan, I. Povey, P. K. Hurley, C. L. Hinkle, Y. Chabal, R. M. Wallace, "Atomic layer deposition of HfO2 on III-V semiconductors- An interfacial chemistry perspective," Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo 2, 1 (2013).

 

52. H. Dong, W. Cabrera, R. V. Galatage, Santosh KC, B. Brennan, X. Qin, S. McDonnell, D. Zhernokletov, C. L. Hinkle, K. Cho, Y. J. Chabal, and R. M. Wallace, "Indium diffusion through high-k dielectrics in high-k/InP stacks," Applied Physics Letters 103, 061601 (2013).

 

51. X. Qin, B. Brennan, H. Dong, J. Kim, C. L. Hinkle, and R. M. Wallace, "In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N," Journal of Applied Physics 113, 244102 (2013).

 

50. H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C. L. Hinkle, and R. M. Wallace, "In situ Study of HfO2 Atomic Layer Deposition on InP (100)," Applied Physics Letters 102, 171602 (2013).

 

49. J. Chan, M. Balakchiev, A. M. Thron, R. A. Chapman, D. Riley, S. C. Song, A. Jain, J. Blatchford, J. B. Shaw, K. van Benthem, E. M. Vogel, C. L. Hinkle, "PtSi Dominated Schottky Barrier Heights of Ni(Pt)Si Contacts Due to Pt Segregation," Applied Physics Letters 102, 123507 (2013).

 

48. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors," Applied Physics Letters 102, 132903 (2013).

 

47. A. M. Thron, T. J. Pennycook, J. Chan, W. Luo, A. Jain, D. Riley, J. Blatchford, J. B. Shaw, K. van Benthem, E. M. Vogel, C. L. Hinkle, K. van Benthem, "Formation of pre-silicide layers below Ni1-xPtxSi/Si interfaces," Acta Materialia 61, 2481 (2013).

 

46. B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace, "In-situ studies of III-V surfaces and high-k atomic layer deposition," Solid State Phenomena 195, 90 (2013).

 

45. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, M. Christensen, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers,"Gate-Last TiN/HfO2 Band Edge Effective Work Functions Using Low-Temperature Anneals and Selective Cladding to Control Interface Composition," Applied Physics Letters 100, 153501 (2012).

 

44. D. E. Arreaga-Salas, A. K. Sra, E. Roodenko, Y. J. Chabal, and C. L. Hinkle, "Progression of Solid Electrolyte Interphase Formation on Hydrogenated Amorphous Silicon Anodes for Lithium-Ion Batteries," Journal of Physical Chemistry C 116, 9072 (2012).

 

43. C. L. Hinkle, J. Chan, F. J. Mendez-Lopez, R. A. Chapman, E. M. Vogel, D. Riley, A. Jain, S. C. Song, K. Y. Lim, J. Blatchford, J. B. Shaw, "Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation," Conference Proceedings of the 12th International Workshop on Junction Technology (2012).

 

42. S. McDonnell, H. Dong, J. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace,"Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems," Applied Physics Letters 100, 141606 (2012).

 

41. B. Brennan, D. M. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace,"In-situ Surface Pre-Treatment Study of GaAs and In0.53Ga0.47As,"  Applied Physics Letters 100, 151603 (2012).

 

40. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors," Applied Physics Letters 99, 172901 (2011).

 

39. C. L. Hinkle, E. M. Vogel, P. D. Ye, and R. M. Wallace, "Interfacial Chemistry of Oxides on InxGa1-xAs and Implications for MOSFET Applications," Current Opinion in Solid State & Materials Science 15, 188 (2011).

 

38. M. Milojevic, R. Contreras-Guerrero, E. O'Connor, B. Brennan, P. K. Hurley, J. Kim, C. L. Hinkle, and R. M. Wallace, "In-Situ XPS characterization of Ga2O passivation of In0.53Ga0.47As prior to ALD high-k dielectric deposition," Applied Physics Letters 99, 042904 (2011).

 

37. J. Chan, N. Y. Martinez, J. J. D. Fitzgerald, A. V. Walker, R. A. Chapman, D. Riley, A. Jain, C. L. Hinkle, and E. M. Vogel, "Extraction of Correct Schottky Barrier Height of Sulfur Implanted NiSi/n-Si Junctions: Junction Doping Rather than Barrier Height Lowering," Applied Physics Letters 99, 012114 (2011).

 

36. A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect transistors," Applied Physics Letters 98, 193591 (2011).

 

35. W. Wang, C. L. Hinkle, E. M. Vogel, K. Cho, and R. M. Wallace, "Is interfacial chemistry correlated to gap states for high-k/III-V interfaces," Microelectronic Engineering 88, 1061 (2011).

 

34. A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, and E. M. Vogel, "Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs," Microelectronic Engineering 88, 1083 (2011).

 

33. B. Brennan, M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, G. Hughes, and R. M. Wallace, “Optimsation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As,” Applied Surface Science 257 4082–4090 (2011).

 

32. A. M. Sonnet, C. L. Hinkle, D. Heh, G. Bersuker, and E. M. Vogel,  “Impact of Semiconductor and Interface State Capacitance on Metal/High-k/GaAs Capacitance-Voltage Characteristics,” IEEE Transactions on Electron Devices 57, 2599 (2010).

 

31. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C.

Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, “Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks,” Applied Physics Letters 96, 103502 (2010).

 

30. C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace, “The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding”, Applied Physics Letters 95, 151905 (2009).

 

29. C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, “Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning”, Applied Physics Letters 94, 162101 (2009).

 

28. C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace, “Surface passivation and implications on high mobility channel performance”, Microelectronic Engineering 86, 1544 (2009).

 

27. C. L. Hinkle, A. M. Sonnet, R. A. Chapman, and E. M. Vogel, “Extraction of the Effective Mobility of In0.53Ga0.47As MOSFETs”, IEEE Electron Device Letters 30, 316 (2009).

 

26. M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces”, Applied Physics Letters 93, 252905 (2008).

 

25. M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As(100) surfaces”, Applied Physics Letters 93, 202902 (2008).

 

24. C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim, J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics”, Applied Physics Letters 93, 113506 (2008).

 

23. A. M. Sonnet, C. L. Hinkle, M. N. Jivani, R. A. Chapman, G. P. Pollack, R. M. Wallace, and E. M. Vogel, “Performance enhancement of n-channel inversion type InxGa1-xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer”, Applied Physics Letters 93, 122109 (2008).

 

22. F. S. Aguirre-Tostado, M. Milojevic, K. J. Choi, H. C. Kim, C. L. Hinkle, E. M. Vogel, J. Kim, T. Yang, Y. Xuan, P. D. Ye, and R. M. Wallace, “S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates”, Applied Physics Letters 93, 061907 (2008).

 

21. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace.  “GaAs interfacial self-cleaning by atomic layer deposition.”, Applied Physics Letters 92, 071901 (2008).

 

20. F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes.  “Indium stability on InGaAs during atomic H surface cleaning.”, Applied Physics Letters 92, 171906 (2008).

 

19. Y. M. Strzhemechny , M. Bataiev , S. P. Tumakha, S. H. Goss , C. L. Hinkle, C. C. Fulton, G. Lucovsky , and L. J. Brillson.  “Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks.”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, 232 (2008).

 

18. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace.  “Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation.” Applied Physics Letters 91, 163512 (2007).

 

17. G. Lucovsky, C.L. Hinkle, C.C. Fulton, N.A. Stoute, H. Seo, and J. Luning.  “Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2,” Radiation Physics and Chemistry 75, 11 (2006).

 

16. C.L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky, “Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers.", Applied Surface Science 234, 240 (2004).

 

15. G. Lucovsky, G.B. Rayner, D. Kang, C.L. Hinkle, and J.G. Hong, “A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys”, Applied Surface Science 234, 429 (2004).

 

14. C.L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky, "Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers.", Surface Science 566, 1185 (2004).

 

13. G. Lucovsky, G.B. Rayner, D. Kang, C.L. Hinkle, J.G. Hong, “A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys”, Surface Science 566, 772 (2004).

 

12. D. Niu, R.W. Ashcraft, C. Hinkle, G.N. Parsons, “Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics”, J. of Vacuum Science and Technology A 22, 445 (2004).

 

11. G. V. Soares, K. P. Bastos, R. P. Pezzi, L. Miotti, C. Driemeier, I. J. R. Baumvol, C. Hinkle and G. Lucovsky, “Nitrogen bonding, stability, and transport in AlON films on Si”, Applied Physics Letters 84, 4992 (2004).

 

10. L.F. Edge, D.G. Schlom, R.T. Brewer, Y.J. Chabal, J.R. Williams, S.A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Hollander, J. Schubert, “Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon”, Applied Physics Letters 84, 4629 (2004).

 

9. C. L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky, " A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices ", Microelectronic Engineering 72, 257 (2004).

 

8. G.B. Rayner, D. Kang, C.L. Hinkle, J.G. Hong, G. Lucovsky, “Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity”, Microelectronic Engineering 72, 304 (2004).

 

7. C. Hinkle and Gerry Lucovsky, “Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3”, Applied Surface Science 216, 124 (2003).

 

6. K. P. Bastos, R. P. Pezzi, L. Miotti, G. V. Soares, C. Driemeier, J. Morais, I. J. R. Baumvol, C. Hinkle and G. Lucovsky, “Thermal stability of plasma-nitrided aluminum oxide films on Si.”  Applied Physics Letters 84, 97 (2004).

 

5. R. S. Johnson, C. Hinkle, J. G. Hong and G. Lucovsky, "Electron trapping in non-crystalline RPECVD Hf-Aluminates for gate dielectric applications.", J. of Vacuum Science and Technology B 20,1126 (2002).

 

4. R. S. Johnson, C. Hinkle, J. G. Hong, and G. Lucovsky, "Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices.", Solid State Electronics 46, 1799 (2002).

 

3. Christopher L. Hinkle and John M. Blondin, "Hydrodynamic instabilities in young supernova remnants", AIP Conf. Proc. 565, 81 (2001).

 

2. B. J. Hinds, F. Wang, D. M. Wolfe, C. L. Hinkle, and G. Lucovsky, "Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition", J.Vac.Sci.Technol. B 16, 2171 (1998).

 

1. B. J. Hinds, F. Wang, D. M. Wolfe, C. L. Hinkle and G. Lucovsky, "Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix.", J. of Non-Crystalline Solids 230, 507 (1998).