Invited Presentations
42. "Future Stars of the AVS: Low-Temperature Growth for 3D Integration of van der Waals Materials,"
C. L. Hinkle
AVS 65th International Symposium & Exhibition, Long Beach, California 2018.
41. "Low-Temperature Growth for 3D Integration of 2D Materials,"
C. L. Hinkle
WINDS 2018, Workshop on Innovative Nanoscale Devices and Systems, Kona, Hawaii 2018.
40. "2D materials growth for vertically integrated nanoelectronics,"
C. L. Hinkle
North American MBE Workshop, Banff, Canada 2018.
39. "Low-Temperature Growth for 3D Integration of 2D Materials,"
C. L. Hinkle
Graphene 2018, Dresden, Germany 2018.
38. "High Hole Mobility, 3D Vertical Intagration Compatible WSe2 FETs Grown by MBE on ALD Oxides,"
C. L. Hinkle
Compound Semiconductor Week, Boston, Massachusetts 2018.
37. "TMD and Topological Insulator Heterostructures,"
C. L. Hinkle
Materials Research Society Spring Meeting, Phoenix, Arizona 2018.
36. "Nucleation and Growth of WSe2: Enabling Large Grain Transition Metal Dichalcogenides,"
C. L. Hinkle
Third 2D Electronic Materials Symposium - 21st American Conference on Crystal Growth and Epitaxy, Santa Fe, New Mexico 2017.
35. "Back-End-of-Line Compatible WSe2 FETs Grown by MBE on ALD Oxides,"
C. L. Hinkle
US-EU 2D Workshop, Arlington, VA 2017.
34. " Back-End-of-Line Compatible Transition Metal Dichalcogenides and Topological Insulators Grown by van der Waals Epitaxy,"
C. L. Hinkle
Boise State University, Boise, Idaho 2017.
33. "van der Waals Epitaxy of TMDs and Topological Insulators,"
C. L. Hinkle
146th Annual TMS Meeting & Exhibition, San Diego, California 2017.
32. “van der Waals heterostructures grown by MBE,”
C. L. Hinkle
APS March Meeting, Baltimore, Maryland 2016.
31. “TMDs and Heterostructures grown by MBE,”
C. L. Hinkle
Lund University, Lund, Sweden 2016.
30. “Transition Metal Dichalcogenide (TMD) growth by MBE and their interfaces with other materials,”
C. L. Hinkle
19th Workshop on Dielectrics in Microelectronics, Catania, Italy 2016.
29. "van der Waals Epitaxy for New 2D Materials Based Low-power Logic and Memory,"
C. L. Hinkle
IEEE Nanotechnology Materials and Devices Conference, Anchorage, Alaska 2015
28. "Transition Metal Dichalcogenide Heterostructures Grown by MBE,"
C. L. Hinkle
Functional 2D Materials, 24th International Materials Research Congress, Cancun, Mexico 2015.
27. "Transition Metal Dichalcogenides Grown by MBE: Heterostructures for Nano- and Opto-Electronic Applications,"
C. L. Hinkle
Functional 2D Materials, IEEE Photonics Society 2015 Summer Topical Meetings, Nassau, Bahamas 2015.
26. “2D Materials Growth and Prospects,”
L. Colombo, S. Banerjee, R. M. Wallace, and C. L. Hinkle
45th IEEE Semiconductor Interface Specialists Conference, San Diego, California 2014.
25. “Defects in MoS2 and other TMDs: Impact on Device Performance and Variability,”
C. L. Hinkle
IEEE International Integrated Reliability Workshop, Lake Tahoe, California 2014.
24. “Transition Metal Dichalcogenide Growth and Characterization for Low-power Electronics and Energy Storage,”
C. L. Hinkle
Army Research Laboratory 2D Science and Technology Applications: International Technical Exchange, Adelphi, Maryland 2014.
23. “Chemical Synthesis, Computational Modeling, and Surface Reactions of Silicon Nanotube Anodes and Silicate Cathodes for Lithium Ion Battereies,”
C. L. Hinkle, A. K. Sra, D. E. Arreaga, R. Longo, K. Roodenko, Y. J. Chabal, K. J. Cho
APS March Meeting, Denver, Colorado 2014.
22. “Silicon-Based Electrodes for Li-ion Batteries: Spectroscopic Analysis for Improved Performance,”
C. L. Hinkle, A. K. Sra, J. Rossi, R. Longo, K. J. Cho
TMS Annual Meeting, San Diego, California 2014.
21. "III-V/High-k Defects: DIGS vs. Border Traps,"
C. L. Hinkle, R. V. Galatage, D. M. Zhernokletov, H. Dong, S. R. M. Anwar, B. Brennan, R. M. Wallace, and E. M. Vogel
223rd Electrochemical Society Meeting, Toronto, Canada 2013.
20. "Chemical Synthesis, Computational Modeling, and Surface Reactions of Silicon Nanotube Anodes and Silicate Cathodes for Lithium Ion Batteries,"
C. L. Hinkle, A. K. Sra, D. E. Arreaga-Salas, J. Rossi, R. Longo, K. Roodenko, K. J. Cho, and Y. J. Chabal
TMS Annual Meeting, San Antonio, Texas 2013.
19. "Chemical Analysis of High-k/III-V Interfaces and Device Impact,"
C. L. Hinkle
9th International Symposium on Advanced Gate Stack Techology, Saratoga Springs, New York October 2012.
18. "Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation,"
C. L. Hinkle, J. Chan, E. M. Vogel, A. M. Thron, K. van Benthem, R. A. Chapman, D. Riley, S. C. Song, A. Jain, J. Blatchford, and J. Shaw
12th International Workshop on Junction Technology, Shanghai, China June 2012.
17. “In-situ studies of III-V surfaces and high-k atomic layer deposition,”
B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace
Ultra Clean Processing of Semiconductor Surfaces XI, Ghent, Belgium, September 2012.
16. "Interface Chemical States and MOSFET Performance of High-k/III-V Devices,"
C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, R. V. Galatage, W. Wang, K. J. Cho, E. M.Vogel, and R. M. Wallace,
5th International Workshop on High-k Dielectrics on High Carrier Mobility Semiconductors, Hsinchu, Taiwan 2011.
15. "Band-edge Effective Work Functions by Controlling HfO2/TiN Interfacial Composition for Gate-Last CMOS,"
C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers,
219th Electrochemical Society Meeting (ECS), Montreal, Quebec 2011.
14. "High-k Oxide Growth on III-V Semiconductors: Chemical Bonding and MOSFET Performance,"
C. L. Hinkle, M. Milojevic, B. Brennan, S. McDonnell, A. Sonnet, D. M. Zhernokletov, R. V. Galatage, E. M.Vogel, and R. M. Wallace,
219th Electrochemical Society Meeting (ECS), Montreal, Quebec 2011.
13. "Interface studies of high-k oxides on III-V semiconductors,"
C. L. Hinkle, M. Milojevic, B. Brennan, W. Wang, A. Sonnet, R. V. Galatage, K. J. Cho, E. M.Vogel, and R. M. Wallace,
2011 MRS Spring Meeting, San Francisco, CA 2011.
12. “Remote Phonon and Surface Roughness Limited Universal Electron Mobility of In0.53Ga0.47As Surface Channel MOSFETs,”
E. M. Vogel, A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, and C. L. Hinkle
58th AVS International Symposium, Nashville, TN, November 2011.
11. “In-situ Studies of High-k Oxide Growth on III-V Semiconductors,”
C. L. Hinkle, M. Milojevic, B. Brennan, S. McDonnell, A. Sonnet, D. M. Zhernokletov, R. V. Galatage, E. M.Vogel, and R. M. Wallace
41st Semiconductor Interface Specialists Conference,
San Diego, CA 2010.
10. “Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs,”
E. Vogel, A. Sonnet, R. Galatage, M. Milojevic, C. Hinkle, and R. M. Wallace
217th Electrochemical Society Meeting,
Vancouver, Canada 2010.
9. “III-V MOS Device Performance Enhancement by Detection and Control of
Individual Surface Oxidation States,”
C.L. Hinkle, M. Milojevic, A.M. Sonnet, E.M. Vogel, R.M. Wallace
56th International Symposium of the AVS,
San Jose, CA, USA 2009.
8. “Interfacial engineering of InGaAs/high-k metal-oxide-semiconductor field-effect-transistors (MOSFETs),”
A. M. Sonnet, R. V. Galatage, M. N. Jivani, M. Milojevic, R. A. Chapman, C. L. Hinkle, R. M. Wallace, and E. M. Vogel
IEEE Integrated Reliability Workshop,
South Lake Tahoe, CA, USA 2009.
7. “Metal gate electrode impurity engineering for control of effective work function,”
J. J. Chambers, H. Niimi, A. Li-Fatou, J. Shaw, C. L. Hinkle, H. N. Alshareef, R. A. Chapman, R. V. Galatage, E. M. Vogel, C. Freeman, and E. Wimmer
6th International Symposium on Advanced Gate Stack Technology,
San Francisco, CA, USA 2009.
6. “Impact of surface preparations on the transport characteristics of InGaAs metal-oxide-semiconductor field effect transistors (MOSFETs),”
A. M. Sonnet, R. V. Galatage, M. N. Jivani, E. O’Connor, P. K. Hurley, M. Milojevic, N. Goel, P. Kirsch, J. Huang, R. A. Chapman, C. L. Hinkle, R. M. Wallace and E. M. Vogel
6th International Symposium on Advanced Gate Stack Technology,
San Francisco, CA, USA 2009.
5. "Surface passivation and implications on high mobility channel performance,”
C.L.Hinkle, M.Milojevic, E.M.Vogel and R.M.Wallace
INFOS 2009- 16th Biennial International Conference on Insulating Films on
Semiconductors,
Cambridge University, UK 2009.
4. “Surface studies of III-V materials: oxidation control and device implications,”
C. L. Hinkle, M. Milojevic, A. M. Sonnet, H. C. Kim, J. Kim, E. M. Vogel, and
R. M. Wallace
Graphene and Emerging Materials for Post-CMOS Applications
215th Electrochemical Society Meeting
San Francisco, CA, USA 2009.
3. “High-κ dielectrics for CMOS beyond 22nm,” M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, B. Lee, S. J. McDonnell, K. J. Choi, H. C. Kim, A. M. Sonnet, G. J. Hughes, E. M. Vogel, J. Kim and R. M. Wallace
15th Workshop on Dielectrics in Microelectronics, WoDiM 2008
Bad Saarow (Berlin), Germany 2008.
2. “Electrical and Physical Properties of GaAs MOS Devices with Al2O3/a-Si Gate Dielectric Stacks,”
E. Vogel, A. Sonnet, C. L. Hinkle, F. S. Aguirre-Tostado, M. Milojevic, J. Kim, and R.M. Wallace
5th International Symposium on Advanced Gate Stack Technology (ISAGST)
Lakeway Resort & Spa, Austin, Texas 2008.
1. “Characterization of electrically active interfacial defects in high-κ gate dielectrics,”
E. M. Vogel, A. M. Sonnet, and C. L. Hinkle
211th Electrochemical Society Meeting
Chicago, Illinois 2007.