Invited Presentations
69. Nanomaterials for Electronic Devices and Interconnects
C. L. Hinkle
Nanoseries 2025, Valencia, Spain, June 2025
68. Using AI and ML for Materials Design and Discovery: Ferroelectrics
C. L. Hinkle
Design Automation and Test in Europe (DATE), Lyon, France, April 2025
67. AI/AE for High-Throughput Materials Discovery and Precision Synthesis
C. L. Hinkle
SLAC Workshop on Accelerating Research on Novel Approaches for Energy-Efficient Computing, Palo Alto, CA, February 2025
66. Advanced Materials for Nanoelectronics
C. L. Hinkle
Lund University, Sweden, October 2024
65. The Future of Microelectronics
C. L. Hinkle
Inclusive Engineering Consortium Workshop, Tucson, Arizona, March 2024
64. Data-Driven Synthesis and Characterization for Accelerated Electronic Materials Discovery
C. L. Hinkle
AI-Enhanced Co-Design for Next Generation Microelectronics (AICOM) Workshop, Sandia National Laboratory, April 2024
63. Bulk Traps in Layered 2D Gate Dielectrics
C. L. Hinkle
Electrochemical Society Symposium, San Francisco, California, May 2024
62. Substitutionally Doped Transition Metal Dichalcogenides for Magnetic Memory Applications
C. L. Hinkle
RPI Materials Science and Engineering Seminar, Troy, New York, March 2024
61. Oxide Semiconductors
C. L. Hinkle
Invited Presentation at Samsung, Seoul, South Korea, 2023
60. Accelerated Materials Discovery: Interconnects, Oxide Semiconductors, & Magnetoelectrics
C. L. Hinkle
Invited Presentation at SK Hynix, Seoul, South Korea, 2023
59. Substitutionally Doped Transition Metal Dichalcogenides for Magnetic Memory Applications
C. L. Hinkle
23rd American Conference on Crystal Growth and Epitaxy, Tucson, AZ, 2023
58. New Functional Heterostructures Through Low-Temperature Growth of van der Waals Materials
C. L. Hinkle
7th International Symposium on Graphene Devices, Washington, D.C., 2022
57. TMDs for Magnetic Memory & Back-End Integration
C. L. Hinkle
2022 Graphene and Beyond, Penn State University, 2022
56. Transition Metal Dichalcogenides: Processing, Scaling, Performance, and Reliability
C. L. Hinkle
International Reliability Physics Symposium, Dallas, TX, 2022
55. New Strategies in Nanoelectronic 3D Heterogeneous Integration (Keynote Presentation)
C. L. Hinkle
NSF Future of Semiconductors Workshop, 2021
54. 2D Materials for BEOL Devices
C. L. Hinkle
Georgia Tech Materials Science and Engineering Department Seminar, Atlanta, Georgia, 2021
53. 2D Materials for BEOL Devices
C. L. Hinkle
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas, 2021
52. Ferromagnetism and Exchange Coupling with Fe-Doped WSe2
C. L. Hinkle
237th Electrochemical Society (ECS) Meeting, Montreal, Canada, 2020
51. Vertical Integration through Direct Growth of van der Waals Materials
C. L. Hinkle
237th Electrochemical Society (ECS) Meeting, Montreal, Canada, 2020
50. Magnetic Transition Metal Dichalcogenides
C. L. Hinkle
Materials Research Society Spring Meeting, Phoenix, Arizona, 2020
49. TMDs and Topological Insulator Heterostructures Grown by van der Waals Epitaxy for New Logic and Memory Devices
C. L. Hinkle
Rutgers University Physics Colloquium, Rutgers, New Jersey, 2020
48. Monolithic Heterogeneous 3D Integration (Keynote Presentation)
C. L. Hinkle
SRC Global Research Consortium Workshop, Austin, Texas, 2019
47. Advances in Large-Scale Synthesis of Beyond Graphene 2D Materials
C. L. Hinkle
Fall Materials Research Society Tutorial, Boston, Massachusetts, 2019
46. Low Temperature Growth of 2D Materials
C. L. Hinkle
2D Materials Summer School, University of Minnesota, Minneapolis, Minnesota, 2019
45. Growth of Topological Insulators and Related Materials
C. L. Hinkle
50th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, 2019
44. Vertical Integration through the Direct Growth of van der Waals Materials
C. L. Hinkle
INFOS 2019-16th Biennial International Conference on Insulating Films on Semiconductors, Cambridge University, UK, 2019
43. van der Waals Epitaxy of 2D Materials
C. L. Hinkle
Paul Drude Workshop, Berlin, Germany, 2019
42. Future Stars of the AVS: Low-Temperature Growth for 3D Integration of van der Waals Materials
C. L. Hinkle
AVS 65th International Symposium & Exhibition, Long Beach, California, 2018
41. Low-Temperature Growth for 3D Integration of 2D Materials
C. L. Hinkle
WINDS 2018, Workshop on Innovative Nanoscale Devices and Systems, Kona, Hawaii, 2018
40. 2D Materials Growth for Vertically Integrated Nanoelectronics
C. L. Hinkle
North American MBE Workshop, Banff, Canada, 2018
39. Low-Temperature Growth for 3D Integration of 2D Materials
C. L. Hinkle
Graphene 2018, Dresden, Germany, 2018
38. High Hole Mobility, 3D Vertical Integration Compatible WSe2 FETs Grown by MBE on ALD Oxides
C. L. Hinkle
Compound Semiconductor Week, Boston, Massachusetts, 2018
37. TMD and Topological Insulator Heterostructures
C. L. Hinkle
Materials Research Society Spring Meeting, Phoenix, Arizona, 2018
36. Nucleation and Growth of WSe2: Enabling Large Grain Transition Metal Dichalcogenides
C. L. Hinkle
Third 2D Electronic Materials Symposium - 21st American Conference on Crystal Growth and Epitaxy, Santa Fe, New Mexico, 2017
35. Back-End-of-Line Compatible WSe2 FETs Grown by MBE on ALD Oxides
C. L. Hinkle
US-EU 2D Workshop, Arlington, VA, 2017
34. Back-End-of-Line Compatible Transition Metal Dichalcogenides and Topological Insulators Grown by van der Waals Epitaxy
C. L. Hinkle
Boise State University, Boise, Idaho, 2017
33. van der Waals Epitaxy of TMDs and Topological Insulators
C. L. Hinkle
146th Annual TMS Meeting & Exhibition, San Diego, California, 2017
32. van der Waals Heterostructures Grown by MBE
C. L. Hinkle
APS March Meeting, Baltimore, Maryland, 2016
31. TMDs and Heterostructures Grown by MBE
C. L. Hinkle
Lund University, Lund, Sweden, 2016
30. Transition Metal Dichalcogenide (TMD) Growth by MBE and Their Interfaces with Other Materials
C. L. Hinkle
19th Workshop on Dielectrics in Microelectronics, Catania, Italy, 2016
29. van der Waals Epitaxy for New 2D Materials Based Low-Power Logic and Memory
C. L. Hinkle
IEEE Nanotechnology Materials and Devices Conference, Anchorage, Alaska, 2015
28. Transition Metal Dichalcogenide Heterostructures Grown by MBE
C. L. Hinkle
Functional 2D Materials, 24th International Materials Research Congress, Cancun, Mexico, 2015
27. Transition Metal Dichalcogenides Grown by MBE: Heterostructures for Nano- and Opto-Electronic Applications
C. L. Hinkle
Functional 2D Materials, IEEE Photonics Society 2015 Summer Topical Meetings, Nassau, Bahamas, 2015
26. 2D Materials Growth and Prospects
L. Colombo, S. Banerjee, R. M. Wallace, and C. L. Hinkle
45th IEEE Semiconductor Interface Specialists Conference, San Diego, California, 2014
25. Defects in MoS2 and Other TMDs: Impact on Device Performance and Variability
C. L. Hinkle
IEEE International Integrated Reliability Workshop, Lake Tahoe, California, 2014
24. Transition Metal Dichalcogenide Growth and Characterization for Low-Power Electronics and Energy Storage
C. L. Hinkle
Army Research Laboratory 2D Science and Technology Applications: International Technical Exchange, Adelphi, Maryland, 2014
23. Chemical Synthesis, Computational Modeling, and Surface Reactions of Silicon Nanotube Anodes and Silicate Cathodes for Lithium-Ion Batteries
C. L. Hinkle, A. K. Sra, D. E. Arreaga, R. Longo, K. Roodenko, Y. J. Chabal, K. J. Cho
APS March Meeting, Denver, Colorado, 2014
22. Silicon-Based Electrodes for Li-Ion Batteries: Spectroscopic Analysis for Improved Performance
C. L. Hinkle, A. K. Sra, J. Rossi, R. Longo, K. J. Cho
TMS Annual Meeting, San Diego, California, 2014
21. III-V/High-k Defects: DIGS vs. Border Traps
C. L. Hinkle, R. V. Galatage, D. M. Zhernokletov, H. Dong, S. R. M. Anwar, B. Brennan, R. M. Wallace, and E. M. Vogel
223rd Electrochemical Society Meeting, Toronto, Canada, 2013
20. Chemical Synthesis, Computational Modeling, and Surface Reactions of Silicon Nanotube Anodes and Silicate Cathodes for Lithium Ion Batteries
C. L. Hinkle, A. K. Sra, D. E. Arreaga-Salas, J. Rossi, R. Longo, K. Roodenko, K. J. Cho, and Y. J. Chabal
TMS Annual Meeting, San Antonio, Texas, 2013
19. Chemical Analysis of High-k/III-V Interfaces and Device Impact
C. L. Hinkle
9th International Symposium on Advanced Gate Stack Technology, Saratoga Springs, New York, October 2012
18. Reduced NiPtSi Schottky Barriers by Controlling Interface Composition and New Materials Incorporation
C. L. Hinkle, J. Chan, E. M. Vogel, A. M. Thron, K. van Benthem, R. A. Chapman, D. Riley, S. C. Song, A. Jain, J. Blatchford, and J. Shaw
12th International Workshop on Junction Technology, Shanghai, China, June 2012
17. In-Situ Studies of III-V Surfaces and High-k Atomic Layer Deposition
B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace
Ultra Clean Processing of Semiconductor Surfaces XI, Ghent, Belgium, September 2012
16. Interface Chemical States and MOSFET Performance of High-k/III-V Devices
C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, R. V. Galatage, W. Wang, K. J. Cho, E. M. Vogel, and R. M. Wallace
5th International Workshop on High-k Dielectrics on High Carrier Mobility Semiconductors, Hsinchu, Taiwan, 2011
15. Band-Edge Effective Work Functions by Controlling HfO2/TiN Interfacial Composition for Gate-Last CMOS
C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers
219th Electrochemical Society Meeting (ECS), Montreal, Quebec, 2011
14. High-k Oxide Growth on III-V Semiconductors: Chemical Bonding and MOSFET Performance
C. L. Hinkle, M. Milojevic, B. Brennan, S. McDonnell, A. Sonnet, D. M. Zhernokletov, R. V. Galatage, E. M. Vogel, and R. M. Wallace
219th Electrochemical Society Meeting (ECS), Montreal, Quebec, 2011
13. Interface Studies of High-k Oxides on III-V Semiconductors
C. L. Hinkle, M. Milojevic, B. Brennan, W. Wang, A. Sonnet, R. V. Galatage, K. J. Cho, E. M. Vogel, and R. M. Wallace
2011 MRS Spring Meeting, San Francisco, CA, 2011
12. Remote Phonon and Surface Roughness Limited Universal Electron Mobility of In0.53Ga0.47As Surface Channel MOSFETs
E. M. Vogel, A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, and C. L. Hinkle
58th AVS International Symposium, Nashville, TN, November 2011
11. In-Situ Studies of High-k Oxide Growth on III-V Semiconductors
C. L. Hinkle, M. Milojevic, B. Brennan, S. McDonnell, A. Sonnet, D. M. Zhernokletov, R. V. Galatage, E. M. Vogel, and R. M. Wallace
41st Semiconductor Interface Specialists Conference, San Diego, CA, 2010
10. Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs
E. M. Vogel, A. M. Sonnet, R. Galatage, M. Milojevic, C. L. Hinkle, and R. M. Wallace
217th Electrochemical Society Meeting, Vancouver, Canada, 2010
9. III-V MOS Device Performance Enhancement by Detection and Control of Individual Surface Oxidation States
C. L. Hinkle, M. Milojevic, A. M. Sonnet, E. M. Vogel, and R. M. Wallace
56th International Symposium of the AVS, San Jose, CA, USA, 2009
8. Interfacial Engineering of InGaAs/High-k Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs)
A. M. Sonnet, R. V. Galatage, M. N. Jivani, M. Milojevic, R. A. Chapman, C. L. Hinkle, R. M. Wallace, and E. M. Vogel
IEEE Integrated Reliability Workshop, South Lake Tahoe, CA, USA, 2009
7. Metal Gate Electrode Impurity Engineering for Control of Effective Work Function
J. J. Chambers, H. Niimi, A. Li-Fatou, J. Shaw, C. L. Hinkle, H. N. Alshareef, R. A. Chapman, R. V. Galatage, E. M. Vogel, C. Freeman, and E. Wimmer
6th International Symposium on Advanced Gate Stack Technology, San Francisco, CA, USA, 2009
6. Impact of Surface Preparations on the Transport Characteristics of InGaAs MOSFETs
A. M. Sonnet, R. V. Galatage, M. N. Jivani, E. O’Connor, P. K. Hurley, M. Milojevic, N. Goel, P. Kirsch, J. Huang, R. A. Chapman, C. L. Hinkle, R. M. Wallace, and E. M. Vogel
6th International Symposium on Advanced Gate Stack Technology, San Francisco, CA, USA, 2009
5. Surface Passivation and Implications on High Mobility Channel Performance
C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace
INFOS 2009-16th Biennial International Conference on Insulating Films on Semiconductors, Cambridge University, UK, 2009
4. Surface Studies of III-V Materials: Oxidation Control and Device Implications
C. L. Hinkle, M. Milojevic, A. M. Sonnet, H. C. Kim, J. Kim, E. M. Vogel, and R. M. Wallace
Graphene and Emerging Materials for Post-CMOS Applications, 215th Electrochemical Society Meeting, San Francisco, CA, USA, 2009
3. High-κ Dielectrics for CMOS Beyond 22nm
M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, B. Lee, S. J. McDonnell, K. J. Choi, H. C. Kim, A. M. Sonnet, G. J. Hughes, E. M. Vogel, J. Kim, and R. M. Wallace
15th Workshop on Dielectrics in Microelectronics, WoDiM 2008, Bad Saarow (Berlin), Germany, 2008
2. Electrical and Physical Properties of GaAs MOS Devices with Al2O3/a-Si Gate Dielectric Stacks
E. Vogel, A. Sonnet, C. L. Hinkle, F. S. Aguirre-Tostado, M. Milojevic, J. Kim, and R. M. Wallace
5th International Symposium on Advanced Gate Stack Technology (ISAGST), Lakeway Resort & Spa, Austin, Texas, 2008
1. Characterization of Electrically Active Interfacial Defects in High-κ Gate Dielectrics
E. M. Vogel, A. M. Sonnet, and C. L. Hinkle
211th Electrochemical Society Meeting, Chicago, Illinois, 2007